IPT01

IPT015N10N5ATMA1 vs IPT012N08N5ATMA1 vs IPT012N06NATMA1

 
PartNumberIPT015N10N5ATMA1IPT012N08N5ATMA1IPT012N06NATMA1
DescriptionMOSFET N-Ch 100V 300A HSOF-8MOSFET N-Ch 80V 300A HSOF-8MOSFET N-CH 60V 240A HSOF-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseHSOF-8HSOF-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V80 V-
Id Continuous Drain Current300 A300 A-
Rds On Drain Source Resistance1.5 mOhms1.2 mOhms-
Vgs th Gate Source Threshold Voltage2.2 V2.2 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge169 nC178 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W375 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.4 mm2.4 mm-
Length10.58 mm10.58 mm-
SeriesOptiMOS 5OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
Width10.1 mm10.1 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min140 S120 S-
Fall Time30 ns30 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns31 ns-
Factory Pack Quantity20002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time85 ns82 ns-
Typical Turn On Delay Time36 ns35 ns-
Part # AliasesIPT015N10N5 SP001227040IPT012N08N5 SP001227054-
Unit Weight0.027262 oz0.027262 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPT015N10N5ATMA1 MOSFET N-Ch 100V 300A HSOF-8
IPT012N08N5ATMA1 MOSFET N-Ch 80V 300A HSOF-8
IPT019N08N5ATMA1 MOSFET
IPT012N06NATMA1 MOSFET N-CH 60V 240A HSOF-8
IPT012N08N5ATMA1 MOSFET N-Ch 80V 300A HSOF-8
IPT015N10N5ATMA1 MOSFET N-Ch 100V 300A HSOF-8
IPT015N10N5ATMA1-CUT TAPE New and Original
IPT015N10N5ATMA1 015N10N5 New and Original
IPT012N08N5 012N08N5 New and Original
IPT012N08N5 Trans MOSFET N-CH 80V 300A 9-Pin(8+Tab) HSOF
IPT015N10N5 Trans MOSFET N-CH 100V 300A 9-Pin(8+Tab) HSOF
IPT015N10N5ATMAA New and Original
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