IPT05

IPT059N15N3 vs IPT059N15N3ATMA1 vs IPT059N15N3(SP001100162)

 
PartNumberIPT059N15N3IPT059N15N3ATMA1IPT059N15N3(SP001100162)
DescriptionMOSFET MV POWER MOSMOSFET MV POWER MOS
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-HSOF-8PG-HSOF-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage150 V150 V-
Id Continuous Drain Current155 A155 A-
Rds On Drain Source Resistance5.9 mOhms5.9 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge69 nC69 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation375 W375 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.4 mm2.4 mm-
Length10.58 mm10.58 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width10.1 mm10.1 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min86 S86 S-
Fall Time14 ns14 ns-
Product TypeMOSFETMOSFET-
Rise Time35 ns35 ns-
Factory Pack Quantity20002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time46 ns46 ns-
Typical Turn On Delay Time25 ns25 ns-
Part # AliasesIPT059N15N3ATMA1 SP001100162IPT059N15N3 SP001100162-
Unit Weight-0.002293 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPT059N15N3 MOSFET MV POWER MOS
IPT059N15N3ATMA1 MOSFET MV POWER MOS
IPT059N15N3ATMA1 MOSFET N-CH 150V 155A 8HSOF
IPT059N15N3 MOSFET MV POWER MOS
IPT059N15N3(SP001100162) New and Original
IPT059N15N3S New and Original
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