PartNumber | IPU80R1K4P7AKMA1 | IPU80R1K4CEAKMA1 | IPU80R1K4CEBKMA1 |
Description | MOSFET | MOSFET N-CH 800V TO251-3 | MOSFET N-Ch 800V 3.9A IPAK-3 |
Manufacturer | Infineon | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-251-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 800 V | - | - |
Id Continuous Drain Current | 4 A | - | - |
Rds On Drain Source Resistance | 1.4 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 10 nC | - | - |
Minimum Operating Temperature | - 50 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 32 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | CoolMOS | - | - |
Packaging | Tube | - | - |
Height | 6.22 mm | - | - |
Length | 6.73 mm | - | - |
Series | CoolMOS P7 | - | - |
Width | 2.38 mm | - | - |
Brand | Infineon Technologies | - | - |
Fall Time | 20 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 8 ns | - | - |
Factory Pack Quantity | 1500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 40 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Part # Aliases | IPU80R1K4P7 SP001422742 | - | - |
Unit Weight | 0.011993 oz | - | - |