PartNumber | IRF1503STRLPBF | IRF1503STRRPBF | IRF1503SPBF |
Description | MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC | MOSFET N-CH 30V 75A D2PAK | RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC |
Manufacturer | Infineon | - | IR |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 75 A | - | - |
Rds On Drain Source Resistance | 3.3 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 130 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Pd Power Dissipation | 200 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | - | Tube |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 75 S | - | - |
Fall Time | 48 ns | - | 48 ns |
Product Type | MOSFET | - | - |
Rise Time | 130 ns | - | 130 ns |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 59 ns | - | 59 ns |
Typical Turn On Delay Time | 17 ns | - | 17 ns |
Part # Aliases | SP001550938 | - | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 200 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 190 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Rds On Drain Source Resistance | - | - | 3.3 mOhms |
Qg Gate Charge | - | - | 130 nC |