IRF1503SPBF

IRF1503SPBF
Mfr. #:
IRF1503SPBF
Manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF1503SPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF1503SPBF DatasheetIRF1503SPBF Datasheet (P4-P6)IRF1503SPBF Datasheet (P7-P9)IRF1503SPBF Datasheet (P10-P11)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
IR
Product Category
FETs - Single
Packaging
Tube
Unit-Weight
0.139332 oz
Mounting-Style
SMD/SMT
Package-Case
TO-252-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
200 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
48 ns
Rise-Time
130 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
190 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Resistance
3.3 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
59 ns
Typical-Turn-On-Delay-Time
17 ns
Qg-Gate-Charge
130 nC
Channel-Mode
Enhancement
Tags
IRF1503S, IRF1503, IRF150, IRF15, IRF1, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ler Electronic
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, 30V, 190A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:190A; Resistance, Rds On:0.0033ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:960A; Power Dissipation:200W; Power, Pd:200W; Resistance, Rds on @ Vgs = 10V:0.0033ohm; Thermal Resistance, Junction to Case A:0.75°C/W; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Max:4V
Part # Mfg. Description Stock Price
IRF1503SPBF
DISTI # IRF1503SPBF-ND
Infineon Technologies AGMOSFET N-CH 30V 75A D2PAK
RoHS: Compliant
Min Qty: 4000
Container: Tube
Limited Supply - Call
    IRF1503SPBF
    DISTI # SP001561632
    Infineon Technologies AGTrans MOSFET N-CH 30V 190A 3-Pin(2+Tab) D2PAK (Alt: SP001561632)
    RoHS: Compliant
    Min Qty: 1
    Europe - 1230
    • 1:€1.8900
    • 10:€1.4900
    • 25:€1.3900
    • 50:€1.2900
    • 100:€1.2900
    • 500:€1.2900
    • 1000:€1.2900
    IRF1503SPBF
    DISTI # 70016945
    Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 2.6 Milliohms,ID 75A,D2Pak,PD 200W,VGS +/-20
    RoHS: Compliant
    0
    • 3200:$3.6500
    • 6400:$3.5770
    • 16000:$3.4680
    • 32000:$3.3220
    • 80000:$3.1030
    IRF1503SPBF
    DISTI # 942-IRF1503SPBF
    Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
    RoHS: Compliant
    0
      IRF1503SPBFInternational Rectifier 
      RoHS: Compliant
      Europe - 700
        IRF1503SPBF
        DISTI # XSKDRABS0006644
        Infineon Technologies AG 
        RoHS: Compliant
        1230
        • 1230:$1.9900
        • 1000:$2.1400
        Image Part # Description
        IRF1503STRLPBF

        Mfr.#: IRF1503STRLPBF

        OMO.#: OMO-IRF1503STRLPBF

        MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
        IRF150P220XKMA1

        Mfr.#: IRF150P220XKMA1

        OMO.#: OMO-IRF150P220XKMA1-1190

        TRENCH_MOSFETS - Rail/Tube (Alt: IRF150P220XKMA1)
        IRF1503STRRPBF

        Mfr.#: IRF1503STRRPBF

        OMO.#: OMO-IRF1503STRRPBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 30V 75A D2PAK
        IRF150

        Mfr.#: IRF150

        OMO.#: OMO-IRF150-1190

        Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3
        IRF1503S

        Mfr.#: IRF1503S

        OMO.#: OMO-IRF1503S-1190

        New and Original
        IRF150D1

        Mfr.#: IRF150D1

        OMO.#: OMO-IRF150D1-1190

        New and Original
        IRF150N

        Mfr.#: IRF150N

        OMO.#: OMO-IRF150N-1190

        New and Original
        IRF151

        Mfr.#: IRF151

        OMO.#: OMO-IRF151-1190

        Power Field-Effect Transistor, 40A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
        IRF1503SPBF

        Mfr.#: IRF1503SPBF

        OMO.#: OMO-IRF1503SPBF-INFINEON-TECHNOLOGIES

        RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
        IRF1503PBF

        Mfr.#: IRF1503PBF

        OMO.#: OMO-IRF1503PBF-INFINEON-TECHNOLOGIES

        RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 130nC
        Availability
        Stock:
        Available
        On Order:
        3000
        Enter Quantity:
        Current price of IRF1503SPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $2.08
        $2.08
        10
        $1.98
        $19.81
        100
        $1.88
        $187.65
        500
        $1.77
        $886.15
        1000
        $1.67
        $1 668.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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