 |  | | |
| PartNumber | IRF5210STRLPBF | IRF5210STRLP | IRF5210STRLPBF,F5210S,IR |
| Description | MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC | ||
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 60 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 120 nC | - | - |
| Pd Power Dissipation | 3.8 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001554020 | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Package Case | - | TO-252-3 | - |
| Pd Power Dissipation | - | 3.8 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | - 40 A | - |
| Vds Drain Source Breakdown Voltage | - | - 100 V | - |
| Rds On Drain Source Resistance | - | 60 mOhms | - |
| Qg Gate Charge | - | 120 nC | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF5210STRLPBF | MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC | |
| IRF5210STRLPBF | MOSFET P-CH 100V 38A D2PAK | ||
| IRF5210STRLPBF-CUT TAPE | New and Original | ||
| IRF5210STRLP | New and Original | ||
| IRF5210STRLPBF,F5210S,IR | New and Original | ||
| IRF5210STRLPBF,IRF5210SP | New and Original | ||
| IRF5210STRLPBFTR | New and Original |