PartNumber | IRF624SPBF | IRF630NLPBF | IRF630NL |
Description | MOSFET N-Chan 250V 4.4 Amp | MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC | MOSFET N-CH 200V 9.3A TO-262 |
Manufacturer | Vishay | Infineon | IR |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | E | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | Through Hole | - |
Package / Case | TO-263-3 | TO-262-3 | - |
Packaging | Tube | Tube | - |
Height | 4.83 mm | 9.45 mm | - |
Length | 10.67 mm | 10.2 mm | - |
Series | IRF | - | - |
Width | 9.65 mm | 4.5 mm | - |
Brand | Vishay / Siliconix | Infineon / IR | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1000 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.052911 oz | 0.084199 oz | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 200 V | - |
Id Continuous Drain Current | - | 9.3 A | - |
Rds On Drain Source Resistance | - | 300 mOhms | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 23.3 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 82 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 4.9 S | - |
Fall Time | - | 15 ns | - |
Rise Time | - | 14 ns | - |
Typical Turn Off Delay Time | - | 27 ns | - |
Typical Turn On Delay Time | - | 7.9 ns | - |
Part # Aliases | - | SP001559690 | - |