 |  | | |
| PartNumber | IRF6645TR1PBF | IRF6645TR1PBF-CUT TAPE | IRF6645TR |
| Description | MOSFET MOSFT 100V 25A 35mOhm 14nC Qg | ||
| Manufacturer | Infineon | - | IR |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DirectFET-SJ | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 5.7 A | - | - |
| Rds On Drain Source Resistance | 28 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4.9 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 14 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 42 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 0.7 mm | - | - |
| Length | 4.85 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.95 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 7.4 S | - | - |
| Fall Time | 5.1 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001574778 | - | - |
| Unit Weight | 0.017637 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRF6645TRPBF | MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ | |
| IRF6645TR1PBF | MOSFET MOSFT 100V 25A 35mOhm 14nC Qg | ||
| IRF6645TR1PBF-CUT TAPE | New and Original | ||
| IRF6645TR | New and Original | ||
| IRF6645TRPBF. | New and Original | ||
Infineon Technologies |
IRF6645TR1PBF | MOSFET N-CH 100V 5.7A DIRECTFET | |
| IRF6645TRPBF | RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ |