IRF6646

IRF6646TR1PBF vs IRF6646TR1 vs IRF6646

 
PartNumberIRF6646TR1PBFIRF6646TR1IRF6646
DescriptionMOSFET MOSFT 80V 12A 9.5mOhm 36nC QgMOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nCMOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDirectFET-MNDirectFET-MN-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance7.6 mOhms9.5 mOhms-
Vgs th Gate Source Threshold Voltage4.9 V--
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge36 nC36 nC-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation89 W2.8 W-
ConfigurationSingleSingle-
PackagingReelReel-
Height0.7 mm0.7 mm-
Length6.35 mm6.35 mm-
Transistor Type1 N-Channel1 N-Channel-
Width5.05 mm5.05 mm-
BrandInfineon / IRInfineon / IR-
Forward Transconductance Min17 S--
Fall Time12 ns12 ns-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Rise Time20 ns20 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001563466SP001576866-
Unit Weight0.017637 oz--
Minimum Operating Temperature-- 40 C-
Channel Mode-Enhancement-
Type-DirectFet Power MOSFET-
Typical Turn Off Delay Time-31 ns-
Typical Turn On Delay Time-17 ns-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF6646TRPBF MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
IRF6646TR1PBF MOSFET MOSFT 80V 12A 9.5mOhm 36nC Qg
IRF6646TR1 MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
IRF6646TRPBF. New and Original
IRF6646TRPBF-CUT TAPE New and Original
IRF6646 MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
Infineon Technologies
Infineon Technologies
IRF6646TR1 MOSFET N-CH 80V 12A DIRECTFET
IRF6646TR1PBF MOSFET N-CH 80V 12A DIRECTFET
IRF6646TRPBF MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC
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