PartNumber | IRF7831TRPBF | IRF7831TR | IRF7831PBF |
Description | MOSFET MOSFT 30V 21A 3.6mOhm 40nC | MOSFET N-CH 30V 21A 8-SOIC | Darlington Transistors MOSFET 30V 1 N-CH HEXFET 3.6mOhms 40nC |
Manufacturer | Infineon | - | International Rectifier |
Product Category | MOSFET | - | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SO-8 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 21 A | - | - |
Rds On Drain Source Resistance | 4.4 mOhms | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Qg Gate Charge | 40 nC | - | - |
Pd Power Dissipation | 2.5 W | - | - |
Configuration | Single | - | Single Quad Drain Triple Source |
Packaging | Reel | - | Tube |
Height | 1.75 mm | - | - |
Length | 4.9 mm | - | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 3.9 mm | - | - |
Brand | Infineon / IR | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | MOSFETs | - | - |
Part # Aliases | IRF7831TRPBF SP001563658 | - | - |
Unit Weight | 0.019048 oz | - | 0.019048 oz |
Package Case | - | - | SOIC-8 |
Pd Power Dissipation | - | - | 2.5 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 5.3 ns |
Rise Time | - | - | 10 ns |
Vgs Gate Source Voltage | - | - | 12 V |
Id Continuous Drain Current | - | - | 21 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Rds On Drain Source Resistance | - | - | 4.4 mOhms |
Typical Turn Off Delay Time | - | - | 17 ns |
Typical Turn On Delay Time | - | - | 18 ns |
Qg Gate Charge | - | - | 40 nC |
Channel Mode | - | - | Enhancement |