IRF8010S

IRF8010STRLPBF vs IRF8010SPBF vs IRF8010S

 
PartNumberIRF8010STRLPBFIRF8010SPBFIRF8010S
DescriptionMOSFET MOSFT 100V 80A 15mOhm 81nCMOSFET 100V N-CH HEXFET 15mOhms 81nC
ManufacturerInfineonInfineonIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current80 A80 A-
Rds On Drain Source Resistance15 mOhms15 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge81 nC81 nC-
Pd Power Dissipation260 W260 W-
ConfigurationSingleSingle-
PackagingReelTube-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandInfineon / IRInfineon / IR-
Product TypeMOSFETMOSFET-
Factory Pack Quantity8001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001565774SP001575454-
Unit Weight0.139332 oz0.139332 oz-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Channel Mode-Enhancement-
Type-Smps MOSFET-
Fall Time-120 ns-
Rise Time-130 ns-
Typical Turn Off Delay Time-61 ns-
Typical Turn On Delay Time-15 ns-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF8010STRLPBF MOSFET MOSFT 100V 80A 15mOhm 81nC
IRF8010SPBF MOSFET 100V N-CH HEXFET 15mOhms 81nC
IRF8010STRLPBF-CUT TAPE New and Original
IRF8010S New and Original
IRF8010STRLPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
IRF8010STRPBF New and Original
Infineon Technologies
Infineon Technologies
IRF8010STRRPBF MOSFET N-CH 100V 80A D2PAK
IRF8010STRLPBF MOSFET N-CH 100V 80A D2PAK
IRF8010SPBF Darlington Transistors MOSFET 100V N-CH HEXFET 15mOhms 81nC
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