PartNumber | IRF830PBF | IRF830BPBF | IRF830S |
Description | MOSFET N-CH 500V HEXFET MOSFET | MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS | MOSFET RECOMMENDED ALT 844-IRF830SPBF |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | N |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | SMD/SMT |
Package / Case | TO-220AB-3 | TO-220-3 | TO-263-3 |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 4.5 A | - | - |
Rds On Drain Source Resistance | 1.5 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 38 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 74 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | Tube | Tube |
Series | IRF | IRF | IRF |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 2.5 S | - | - |
Fall Time | 16 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 16 ns | - | - |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 42 ns | - | - |
Typical Turn On Delay Time | 8.2 ns | - | - |
Part # Aliases | SIHF830-E3 | - | - |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.050717 oz |
Height | - | 15.49 mm | 4.83 mm |
Length | - | 10.41 mm | 10.67 mm |
Width | - | 4.7 mm | 9.65 mm |