IRF830P

IRF830PBF vs IRF830P vs IRF830PBF 2SK3305

 
PartNumberIRF830PBFIRF830PIRF830PBF 2SK3305
DescriptionMOSFET N-CH 500V HEXFET MOSFET
ManufacturerVishayVISHAY-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220AB-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance1.5 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge38 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation74 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
SeriesIRF--
Transistor Type1 N-Channel1 N-Channel-
BrandVishay / Siliconix--
Forward Transconductance Min2.5 S--
Fall Time16 ns16 ns-
Product TypeMOSFET--
Rise Time16 ns16 ns-
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time42 ns42 ns-
Typical Turn On Delay Time8.2 ns8.2 ns-
Part # AliasesSIHF830-E3--
Unit Weight0.211644 oz0.211644 oz-
Part Aliases-SIHF840-E3-
Package Case-TO-220-3-
Pd Power Dissipation-74 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-4.5 A-
Vds Drain Source Breakdown Voltage-500 V-
Rds On Drain Source Resistance-1.5 Ohms-
Qg Gate Charge-38 nC-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
IRF830PBF MOSFET N-CH 500V HEXFET MOSFET
IRF830P New and Original
IRF830PBF 2SK3305 New and Original
IRF830PBF,IRF730, New and Original
IRF830PBF,IRF830 New and Original
IRF830PBF,IRF830A,IRF830 New and Original
IRF830PBR New and Original
Vishay
Vishay
IRF830PBF MOSFET N-CH 500V 4.5A TO-220AB
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