PartNumber | IRF830PBF | IRF830P | IRF830PBF 2SK3305 |
Description | MOSFET N-CH 500V HEXFET MOSFET | ||
Manufacturer | Vishay | VISHAY | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | E | - | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220AB-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 4.5 A | - | - |
Rds On Drain Source Resistance | 1.5 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 38 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 74 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | - |
Series | IRF | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 2.5 S | - | - |
Fall Time | 16 ns | 16 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 16 ns | 16 ns | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 42 ns | 42 ns | - |
Typical Turn On Delay Time | 8.2 ns | 8.2 ns | - |
Part # Aliases | SIHF830-E3 | - | - |
Unit Weight | 0.211644 oz | 0.211644 oz | - |
Part Aliases | - | SIHF840-E3 | - |
Package Case | - | TO-220-3 | - |
Pd Power Dissipation | - | 74 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 4.5 A | - |
Vds Drain Source Breakdown Voltage | - | 500 V | - |
Rds On Drain Source Resistance | - | 1.5 Ohms | - |
Qg Gate Charge | - | 38 nC | - |