PartNumber | IRF8910TRPBF | IRF8910GTRPBF | IRF8910PBF |
Description | MOSFET MOSFT DUAL NCh 20V 10A | MOSFET MOSFT DUAL NCh 20V 10A | MOSFET 2N-CH 20V 10A 8-SOIC |
Manufacturer | Infineon | Infineon | Infineon Technologies |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 10 A | 10 A | - |
Rds On Drain Source Resistance | 14.6 mOhms | 13.4 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.55 V | 2.55 V | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 7.4 nC | 11 nC | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 2 W | 2 W | - |
Configuration | Dual | Dual | Dual |
Packaging | Reel | Reel | Tube Alternate Packaging |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Width | 3.9 mm | 3.9 mm | - |
Brand | Infineon / IR | Infineon / IR | - |
Forward Transconductance Min | 24 S | 24 S | - |
Fall Time | 4.1 ns | 4.1 ns | 4.1 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 10 ns | 10 ns | 10 ns |
Factory Pack Quantity | 4000 | 4000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 9.7 ns | - | 9.7 ns |
Typical Turn On Delay Time | 6.2 ns | - | 6.2 ns |
Part # Aliases | SP001555820 | SP001575420 | - |
Unit Weight | 0.017870 oz | 0.017870 oz | 0.019048 oz |
Series | - | - | HEXFETR |
Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-SO |
FET Type | - | - | 2 N-Channel (Dual) |
Power Max | - | - | 2W |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | 960pF @ 10V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 10A |
Rds On Max Id Vgs | - | - | 13.4 mOhm @ 10A, 10V |
Vgs th Max Id | - | - | 2.55V @ 250μA |
Gate Charge Qg Vgs | - | - | 11nC @ 4.5V |
Pd Power Dissipation | - | - | 2 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 10 A |
Vds Drain Source Breakdown Voltage | - | - | 20 V |
Rds On Drain Source Resistance | - | - | 18.3 mOhms |
Qg Gate Charge | - | - | 7.4 nC |
Channel Mode | - | - | Enhancement |