PartNumber | IRF9Z34SPBF | IRF9Z34PBF | IRF9Z34S |
Description | MOSFET P-Chan 60V 18 Amp | MOSFET P-CH -60V HEXFET MOSFET | MOSFET RECOMMENDED ALT 844-IRF9Z34SPBF |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | E | N |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | TO-263-3 | TO-220AB-3 | TO-263-3 |
Packaging | Tube | Tube | Tube |
Height | 4.83 mm | 15.49 mm | 4.83 mm |
Length | 10.67 mm | 10.41 mm | 10.67 mm |
Series | IRF9Z | IRF9Z | IRF9Z |
Width | 9.65 mm | 4.7 mm | 9.65 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 1000 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.050717 oz | 0.211644 oz | 0.050717 oz |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | P-Channel | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Id Continuous Drain Current | - | 18 A | - |
Rds On Drain Source Resistance | - | 140 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 10 V | - |
Qg Gate Charge | - | 34 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 88 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 P-Channel | - |
Forward Transconductance Min | - | 5.9 S | - |
Fall Time | - | 58 ns | - |
Rise Time | - | 120 ns | - |
Typical Turn Off Delay Time | - | 20 ns | - |
Typical Turn On Delay Time | - | 18 ns | - |