PartNumber | IRF9910TR | IRF9910 | IRF9910PBF |
Description | MOSFET 2N-CH 20V 10A 8-SOIC | MOSFET 2N-CH 20V 10A 8-SOIC | MOSFET 2N-CH 20V 10A/12A 8-SOIC |
Manufacturer | - | Infineon Technologies | International Rectifier |
Product Category | - | FETs - Arrays | Transistors - FETs, MOSFETs - Single |
Series | - | HEXFETR | - |
Packaging | - | Tube | Tube |
Package Case | - | 8-SOIC (0.154", 3.90mm Width) | SOIC-8 |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | 8-SO | - |
FET Type | - | 2 N-Channel (Dual) | - |
Power Max | - | 2W | - |
Drain to Source Voltage Vdss | - | 20V | - |
Input Capacitance Ciss Vds | - | 900pF @ 10V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 10A, 12A | - |
Rds On Max Id Vgs | - | 13.4 mOhm @ 10A, 10V | - |
Vgs th Max Id | - | 2.55V @ 250μA | - |
Gate Charge Qg Vgs | - | 11nC @ 4.5V | - |
Unit Weight | - | - | 0.019048 oz |
Mounting Style | - | - | SMD/SMT |
Technology | - | - | Si |
Number of Channels | - | - | 2 Channel |
Configuration | - | - | Dual |
Transistor Type | - | - | 2 N-Channel |
Pd Power Dissipation | - | - | 2 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 4.5 ns 7.5 ns |
Rise Time | - | - | 10 ns 14 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 10 A |
Vds Drain Source Breakdown Voltage | - | - | 20 V |
Rds On Drain Source Resistance | - | - | 18.3 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 9.2 ns 15 ns |
Typical Turn On Delay Time | - | - | 6.3 ns 8.3 ns |
Channel Mode | - | - | Enhancement |