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| PartNumber | IRF9Z34NSTRRPBF | IRF9Z34NSTRR | IRF9Z34NSTRRPBF,F9Z34NS, |
| Description | MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC | MOSFET P-CH 55V 19A D2PAK | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 19 A | - | - |
| Rds On Drain Source Resistance | 100 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 23.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 68 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 41 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 55 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Part # Aliases | SP001551716 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRF9Z34NSTRRPBF | MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC | |
Infineon Technologies |
IRF9Z34NSTRR | MOSFET P-CH 55V 19A D2PAK | |
| IRF9Z34NSTRRPBF | Darlington Transistors MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC | ||
| IRF9Z34NSTRRPBF,F9Z34NS, | New and Original | ||
| IRF9Z34NSTRRPBF,IRF9Z34N | New and Original |