PartNumber | IRFI620G | IRFI620G-706N | IRFI620GPBF |
Description | MOSFET RECOMMENDED ALT 844-IRFI620GPBF | IGBT Transistors MOSFET N-Chan 200V 4.1 Amp | |
Manufacturer | Vishay | - | IR |
Product Category | MOSFET | - | FETs - Single |
RoHS | N | - | - |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-220-3 | - | - |
Packaging | Tube | - | Tube |
Height | 15.49 mm | - | - |
Length | 10.41 mm | - | - |
Series | IRFI | - | - |
Width | 4.7 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.211644 oz | - | 0.211644 oz |
Package Case | - | - | TO-220-3 |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 30 W |
Maximum Operating Temperature | - | - | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 13 ns |
Rise Time | - | - | 22 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 4.1 A |
Vds Drain Source Breakdown Voltage | - | - | 200 V |
Rds On Drain Source Resistance | - | - | 800 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 19 ns |
Typical Turn On Delay Time | - | - | 7.2 ns |
Channel Mode | - | - | Enhancement |