IRFS7537

IRFS7537TRLPBF vs IRFS7537TRLPBF-CUT TAPE vs IRFS7537PBF

 
PartNumberIRFS7537TRLPBFIRFS7537TRLPBF-CUT TAPEIRFS7537PBF
DescriptionMOSFET MOSFET N CH 60V 173A D2PAKMOSFET N CH 60V 173A D2PAK
ManufacturerInfineon-International Rectifier
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current173 A--
Rds On Drain Source Resistance3.3 mOhms--
Vgs th Gate Source Threshold Voltage3.7 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge142 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation230 W--
ConfigurationSingle-Single
TradenameStrongIRFET--
PackagingReel-Tube
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min190 S--
Fall Time84 ns-84 ns
Product TypeMOSFET--
Rise Time105 ns-105 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time82 ns-82 ns
Typical Turn On Delay Time15 ns-15 ns
Part # AliasesSP001565228--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--230 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--173 A
Vds Drain Source Breakdown Voltage--60 V
Vgs th Gate Source Threshold Voltage--3.7 V
Rds On Drain Source Resistance--3.3 mOhms
Qg Gate Charge--142 nC
Forward Transconductance Min--190 S
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRFS7537TRLPBF MOSFET MOSFET N CH 60V 173A D2PAK
IRFS7537TRLPBF Darlington Transistors MOSFET MOSFET N CH 60V 173A D2PAK
IRFS7537PBF MOSFET N CH 60V 173A D2PAK
IRFS7537TRLPBF-CUT TAPE New and Original
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