PartNumber | IRGSL4062DPBF | IRGSL4640DPBF | IRGSL4B60KD1PBF |
Description | IGBT Transistors 600V Low VCEon | IGBT Transistors IGBT DISCRETES | IGBT Transistors 600V Low-Vceon Non Punch Through |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-262-3 | - | TO-262-3 |
Mounting Style | Through Hole | - | Through Hole |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 600 V | - | 600 V |
Collector Emitter Saturation Voltage | 1.95 V | - | 2.1 V |
Maximum Gate Emitter Voltage | 20 V | - | 20 V |
Continuous Collector Current at 25 C | 48 A | - | 11 A |
Pd Power Dissipation | 250 W | - | 63 W |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Packaging | Tube | Tube | Tube |
Height | 9.65 mm | - | 9.65 mm |
Length | 11.3 mm | - | 11.3 mm |
Width | 4.83 mm | - | 4.83 mm |
Brand | Infineon Technologies | Infineon / IR | Infineon / IR |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | IGBTs | IGBTs | IGBTs |
Part # Aliases | SP001535892 | SP001535882 | SP001548286 |
Unit Weight | 0.073511 oz | - | 0.073511 oz |
Maximum Operating Temperature | - | - | + 175 C |
Series | - | - | RC |
Gate Emitter Leakage Current | - | - | 100 nA |
Tradename | - | - | TRENCHSTOP |