IRGSL4B60KD1PBF

IRGSL4B60KD1PBF
Mfr. #:
IRGSL4B60KD1PBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors 600V Low-Vceon Non Punch Through
Lifecycle:
New from this manufacturer.
Datasheet:
IRGSL4B60KD1PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
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ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-262-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
600 V
Collector-Emitter Saturation Voltage:
2.1 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
11 A
Pd - Power Dissipation:
63 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
RC
Packaging:
Tube
Height:
9.65 mm
Length:
11.3 mm
Width:
4.83 mm
Brand:
Infineon / IR
Gate-Emitter Leakage Current:
100 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
50
Subcategory:
IGBTs
Tradename:
TRENCHSTOP
Part # Aliases:
SP001548286
Unit Weight:
0.073511 oz
Tags
IRGSL4, IRGSL, IRGS, IRG
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
600V Low-Vceon Non Punch Through Copack IGBT in a TO-262 package
***ical
Trans IGBT Chip N-CH 600V 11A 3-Pin(3+Tab) TO-262 Tube
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:11A; Collector Emitter Saturation Voltage, Vce(sat):2.50V; Power Dissipation, Pd:63W; Package/Case:TO-262; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
IRGSL4B60KD1PBF
DISTI # IRGSL4B60KD1PBF-ND
Infineon Technologies AGIGBT 600V 11A 63W TO262
RoHS: Compliant
Min Qty: 300
Container: Tube
Limited Supply - Call
    IRGSL4B60KD1PBF
    DISTI # 70018513
    Infineon Technologies AG600V Low-VCEON Non Punch Through COPACK IGBT IN A TO-262 Package
    RoHS: Compliant
    0
    • 300:$2.0800
    IRGSL4B60KD1PBF
    DISTI # 942-IRGSL4B60KD1PBF
    Infineon Technologies AGIGBT Transistors 600V Low-Vceon Non Punch Through
    RoHS: Compliant
    0
      IRGSL4B60KD1PBF
      DISTI # 8640990P
      Infineon Technologies AGIGBT 600V 11A ULTRAFAST DIODE TO-262, TU68
      • 400:£1.1080
      • 200:£1.1730
      • 80:£1.2530
      • 20:£1.4330
      IRGSL4B60KD1PBFInternational Rectifier 150
        Image Part # Description
        IRGSL4B60KD1PBF

        Mfr.#: IRGSL4B60KD1PBF

        OMO.#: OMO-IRGSL4B60KD1PBF

        IGBT Transistors 600V Low-Vceon Non Punch Through
        IRGSL4B60KD1PBF

        Mfr.#: IRGSL4B60KD1PBF

        OMO.#: OMO-IRGSL4B60KD1PBF-INFINEON-TECHNOLOGIES

        IGBT Transistors 600V Low-Vceon Non Punch Through
        Availability
        Stock:
        Available
        On Order:
        3000
        Enter Quantity:
        Current price of IRGSL4B60KD1PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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