IRGB/S/SL4B60KD1PbF
2 www.irf.com
Note to are on page 16
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V
V
GE
= 0V, I
C
= 500µA
∆
V
(BR)CES
/
∆
T
J
Temperature Coeff. of Breakdown Volta
—0.28—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
—2.12.5
I
C
= 4.0A, V
GE
= 15V, T
J
= 25°C
5,6,7
V
CE(on)
Collector-to-Emitter Voltage — 2.5 2.8 V
I
C
= 4.0A, V
GE
= 15V, T
J
= 150°C
9,10,11
—2.62.9
I
C
= 4.0A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 3.5 4.5 5.5 V
V
CE
= V
GE
, I
C
= 250µA
9,10,11
∆
V
GE(th)
/
∆
T
J
Threshold Voltage temp. coefficient — -8.1 — mV/°
V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
12
gfe Forward Transconductance — 1.7 — S
V
CE
= 50V, I
C
= 4.0A, PW = 80µs
—1.0150
V
GE
= 0V, V
CE
= 600V
I
CES
Zero Gate Voltage Collector Current — 136 600 µA
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
— 722 2400
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop — 1.4 2.0 V
I
F
= 4.0A
8
—1.31.8
I
F
= 4.0A, T
J
= 150°C
—1.21.7
I
F
= 4.0A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig.
Q
g
Total Gate Charge (turn-on) — 12 —
I
C
= 4.0A
23
Q
ge
Gate-to-Emitter Charge (turn-on) — 1.7 — nC
V
CC
= 400V
CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 6.5 —
V
GE
= 15V
E
on
Turn-On Switching Loss — 73 80
I
C
= 4.0A, V
CC
= 400V
CT4
E
off
Turn-Off Switching Loss — 47 53 µJ
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
E
tot
Total Switching Loss — 120 130
T
J
= 25°C
t
d(on)
Turn-On delay time — 22 28
I
C
= 4.0A, V
CC
= 400V
t
r
Rise time — 18 23 ns
V
GE
= 15V, R
G
= 100
Ω
, L = 2.5mH
CT4
t
d(off)
Turn-Off delay time — 100 110
T
J
= 25°C
t
f
Fall time — 66 80
E
on
Turn-On Switching Loss — 130 150
I
C
= 4.0A, V
CC
= 400V
CT4
E
off
Turn-Off Switching Loss — 83 140 µJ
V
GE
= 15V, R
G
= 100
Ω
, L = 2.5mH
13,15
E
tot
Total Switching Loss — 220 280
T
J
= 150°C
WF1,WF2
t
d(on)
Turn-On delay time — 22 27
I
C
= 4.0A, V
CC
= 400V
14,16
t
r
Rise time — 18 22 ns
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
CT4
t
d(off)
Turn-Off delay time — 120 130
T
J
= 150°C
WF1
t
f
Fall time — 79 89 WF2
C
ies
Input Capacitance — 190 —
V
GE
= 0V
C
oes
Output Capacitance — 25 — pF
V
CC
= 30V
22
C
res
Reverse Transfer Capacitance — 6.2 — f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
T
J
= 150°C, I
C
= 22A, Vp = 600V
4
V
CC
=500V,V
GE
= +15V to 0V,R
G
= 100
Ω
CT2
SCSOA Short Circuit Safe Operating Area 10 — — µs
T
J
= 150°C, Vp = 600V, R
G
= 100Ω
CT3
V
CC
=360V,V
GE
= +15V to 0V
WF4
E
rec
Reverse Recovery Energy of the Diode — 81 100 µJ
T
J
= 150°C
17,18,19
t
rr
Diode Reverse Recovery Time — 93 — ns
V
CC
= 400V, I
F
= 4.0A, L = 2.5mH
20,21
I
rr
Peak Reverse Recovery Current — 6.3 7.9 A
V
GE
= 15V, R
G
= 100Ω
CT4,WF3
