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IRGSL4B60KD1PBF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
IRGB/S/SL4B60KD1PbF
4 www.irf.com
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
0 2 4 6 8 10 12
V
CE
(V)
0
5
10
15
20
25
30
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 2 4 6 8 10 12
V
CE
(V)
0
5
10
15
20
25
30
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0 2 4 6 8 10 12
V
CE
(V)
0
5
10
15
20
25
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
F
(V)
0
5
10
15
20
25
30
35
I
F
(
A
)
-40°C
25°C
150°C
IRGB/S/SL4B60KD1PbF
www.irf.com 5
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 12 - Typ. Transfer Characteristics
V
CE
= 360V; tp = 10µs
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 150°C
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 2.0A
I
CE
= 4.0A
I
CE
= 8.0A
5 101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 2.0A
I
CE
= 4.0A
I
CE
= 8.0A
5101520
V
GE
(V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(
V
)
I
CE
= 2.0A
I
CE
= 4.0A
I
CE
= 8.0A
0 5 10 15 20
V
GS
, Gate-to-Source Voltage (V)
0
5
10
15
20
25
30
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 150°C
IRGB/S/SL4B60KD1PbF
6 www.irf.com
Fig. 14 - Typ. Switching Time vs. I
C
T
J
= 150°C; L=2.5mH; V
CE
= 400V
R
G
= 100Ω; V
GE
= 15V
Fig. 13 - Typ. Energy Loss vs. I
C
T
J
= 150°C; L=2.5mH; V
CE
= 400V,
R
G
= 100Ω; V
GE
= 15V
Fig. 16 - Typ. Switching Time vs. R
G
T
J
= 150°C; L=2.5mH; V
CE
= 400V
I
CE
= 4.0A; V
GE
= 15V
Fig. 15 - Typ. Energy Loss vs. R
G
T
J
= 150°C; L=2.5mH; V
CE
= 400V
I
CE
= 4.0A; V
GE
= 15V
12345678910
I
C
(A)
0
50
100
150
200
250
300
350
E
n
e
r
g
y
(
µ
J
)
E
OFF
E
ON
0 100 200 300 400 500
R
G
(
Ω
)
0
50
100
150
200
250
300
350
E
n
e
r
g
y
(
µ
J
)
E
ON
E
OFF
0 2 4 6 8 10
I
C
(A)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0 100 200 300 400 500
R
G
(
Ω
)
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

IRGSL4B60KD1PBF

Mfr. #:
Buy IRGSL4B60KD1PBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors 600V Low-Vceon Non Punch Through
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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