| PartNumber | IRLHS6376TRPBF | IRLHS6376TR2PBF |
| Description | MOSFET 30V 1 N-CH HEXFET 2.8nC | MOSFET MOSFT DUAL N-Ch 30V 63mOhm 2.5V cpbl |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PQFN-6 | PQFN-6 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 3.6 A | 3.6 A |
| Rds On Drain Source Resistance | 63 mOhms | 63 mOhms |
| Vgs Gate Source Voltage | 12 V | 12 V |
| Qg Gate Charge | 2.8 nC | 2.8 nC |
| Pd Power Dissipation | 1.5 W | 6.6 W |
| Configuration | Dual | Dual |
| Packaging | Reel | Reel |
| Height | 0.9 mm | 0.9 mm |
| Length | 2 mm | 2 mm |
| Transistor Type | 2 N-Channel | 2 N-Channel |
| Width | 2 mm | 2 mm |
| Brand | Infineon / IR | Infineon / IR |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 4000 | 400 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001573000 | SP001550442 |
| Vgs th Gate Source Threshold Voltage | - | 12 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Forward Transconductance Min | - | 8.8 S |
| Fall Time | - | 9.4 ns |
| Rise Time | - | 11 ns |
| Typical Turn Off Delay Time | - | 11 nS |
| Typical Turn On Delay Time | - | 4.4 nS |
| Unit Weight | - | 0.017637 oz |