IRLHS6376T

IRLHS6376TRPBF vs IRLHS6376TR2PBF

 
PartNumberIRLHS6376TRPBFIRLHS6376TR2PBF
DescriptionMOSFET 30V 1 N-CH HEXFET 2.8nCMOSFET MOSFT DUAL N-Ch 30V 63mOhm 2.5V cpbl
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CasePQFN-6PQFN-6
Number of Channels2 Channel2 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current3.6 A3.6 A
Rds On Drain Source Resistance63 mOhms63 mOhms
Vgs Gate Source Voltage12 V12 V
Qg Gate Charge2.8 nC2.8 nC
Pd Power Dissipation1.5 W6.6 W
ConfigurationDualDual
PackagingReelReel
Height0.9 mm0.9 mm
Length2 mm2 mm
Transistor Type2 N-Channel2 N-Channel
Width2 mm2 mm
BrandInfineon / IRInfineon / IR
Product TypeMOSFETMOSFET
Factory Pack Quantity4000400
SubcategoryMOSFETsMOSFETs
Part # AliasesSP001573000SP001550442
Vgs th Gate Source Threshold Voltage-12 V
Minimum Operating Temperature-- 55 C
Maximum Operating Temperature-+ 150 C
Forward Transconductance Min-8.8 S
Fall Time-9.4 ns
Rise Time-11 ns
Typical Turn Off Delay Time-11 nS
Typical Turn On Delay Time-4.4 nS
Unit Weight-0.017637 oz
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRLHS6376TRPBF MOSFET 30V 1 N-CH HEXFET 2.8nC
IRLHS6376TR2PBF MOSFET MOSFT DUAL N-Ch 30V 63mOhm 2.5V cpbl
Infineon Technologies
Infineon Technologies
IRLHS6376TR2PBF MOSFET 2N-CH 30V 3.6A PQFN
IRLHS6376TRPBF MOSFET 2N-CH 30V 3.6A PQFN
IRLHS6376TR2PBF-CUT TAPE New and Original
IRLHS6376TRPBF-CUT TAPE New and Original
IRLHS6376TRPBF. Transistor Polarity:Dual N Channel, Continuous Drain Current Id:3.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.048ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:800mV, Po
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