IRLHS6376TRPBF

IRLHS6376TRPBF
Mfr. #:
IRLHS6376TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET 2.8nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRLHS6376TRPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLHS6376TRPBF DatasheetIRLHS6376TRPBF Datasheet (P4-P6)IRLHS6376TRPBF Datasheet (P7-P9)
ECAD Model:
More Information:
IRLHS6376TRPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PQFN-6
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
3.6 A
Rds On - Drain-Source Resistance:
63 mOhms
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
2.8 nC
Pd - Power Dissipation:
1.5 W
Configuration:
Dual
Packaging:
Reel
Height:
0.9 mm
Length:
2 mm
Transistor Type:
2 N-Channel
Width:
2 mm
Brand:
Infineon / IR
Product Type:
MOSFET
Factory Pack Quantity:
4000
Subcategory:
MOSFETs
Part # Aliases:
SP001573000
Tags
IRLHS6376TRP, IRLHS6376T, IRLHS637, IRLHS63, IRLHS6, IRLHS, IRLH, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 63 mOhm 2.8 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ineon SCT
30V Dual N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
***et Europe
Transistor MOSFET Array Dual N-CH 30V 3.4A 6-Pin PQFN T/R
***p One Stop Japan
Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Dual N-Channel MOSFET | Target Applications: DC Switches; Load Switch
***ment14 APAC
DUAL N CH, 30V, 3.6A, PQFN-6; Transistor; DUAL N CH, 30V, 3.6A, PQFN-6; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:3.6A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.048ohm; Rds(on) Test Voltage Vgs:4.5V
Dual PQFN HEXFET® Power MOSFETs
Infineon Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), Infineon Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.Learn More
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.
Part # Mfg. Description Stock Price
IRLHS6376TRPBF
DISTI # V72:2272_13889594
Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
RoHS: Compliant
8516
  • 6000:$0.1715
  • 3000:$0.1971
  • 1000:$0.1993
  • 500:$0.2471
  • 250:$0.2499
  • 100:$0.2527
  • 25:$0.3654
  • 10:$0.3701
  • 1:$0.4268
IRLHS6376TRPBF
DISTI # IRLHS6376TRPBFCT-ND
Infineon Technologies AGMOSFET 2N-CH 30V 3.6A 2X2 PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3049In Stock
  • 1000:$0.2894
  • 500:$0.3667
  • 100:$0.4903
  • 10:$0.6450
  • 1:$0.7600
IRLHS6376TRPBF
DISTI # IRLHS6376TRPBFDKR-ND
Infineon Technologies AGMOSFET 2N-CH 30V 3.6A 2X2 PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3049In Stock
  • 1000:$0.2894
  • 500:$0.3667
  • 100:$0.4903
  • 10:$0.6450
  • 1:$0.7600
IRLHS6376TRPBF
DISTI # IRLHS6376TRPBFTR-ND
Infineon Technologies AGMOSFET 2N-CH 30V 3.6A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
On Order
  • 4000:$0.2585
IRLHS6376TRPBF
DISTI # 27507049
Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
RoHS: Compliant
12000
  • 40000:$0.1285
  • 24000:$0.1324
  • 16000:$0.1353
  • 8000:$0.1391
  • 4000:$0.1429
IRLHS6376TRPBF
DISTI # 26196122
Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
RoHS: Compliant
8516
  • 6000:$0.1715
  • 3000:$0.1971
  • 1000:$0.1993
  • 500:$0.2471
  • 250:$0.2499
  • 100:$0.2527
  • 42:$0.3654
IRLHS6376TRPBF
DISTI # 30605990
Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
RoHS: Compliant
3900
  • 1000:$0.2371
  • 500:$0.2576
  • 100:$0.3047
  • 54:$0.4718
IRLHS6376TRPBF
DISTI # IRLHS6376TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R - Tape and Reel (Alt: IRLHS6376TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 4000
  • 4000:$0.1489
  • 8000:$0.1449
  • 16000:$0.1409
  • 24000:$0.1379
  • 40000:$0.1339
IRLHS6376TRPBF
DISTI # SP001573000
Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R (Alt: SP001573000)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Europe - 0
  • 4000:€0.2199
  • 8000:€0.1709
  • 16000:€0.1399
  • 24000:€0.1179
  • 40000:€0.1099
IRLHS6376TRPBF
DISTI # 91Y4786
Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 3.6A, PQFN-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:3.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,RoHS Compliant: Yes0
  • 1:$0.6000
  • 10:$0.4930
  • 25:$0.4290
  • 50:$0.3650
  • 100:$0.3010
  • 250:$0.2780
  • 500:$0.2550
  • 1000:$0.2320
IRLHS6376TRPBF.
DISTI # 27AC6942
Infineon Technologies AGTransistor Polarity:Dual N Channel,Continuous Drain Current Id:3.6A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.048ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:1.5W RoHS Compliant: Yes0
    IRLHS6376TRPBF
    DISTI # 942-IRLHS6376TRPBF
    Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 2.8nC
    RoHS: Compliant
    19668
    • 1:$0.6000
    • 10:$0.4930
    • 100:$0.3010
    • 1000:$0.2320
    • 4000:$0.1980
    IRLHS6376TRPBFInfineon Technologies AGDual N-Channel 30 V 63 mOhm 2.8 nC HEXFET Power Mosfet - PQFN 2 x 2 mm
    RoHS: Compliant
    4000Reel
    • 4000:$0.1520
    IRLHS6376TRPBF
    DISTI # 9155092P
    Infineon Technologies AGMOSFET DUAL N-CH HEXFET 30V 3.6A PQFN8, RL8000
    • 200:£0.0860
    IRLHS6376TRPBF
    DISTI # 2579953
    Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 3.6A, PQFN-8
    RoHS: Compliant
    2640
    • 5:£0.4260
    • 25:£0.2540
    • 100:£0.2300
    • 250:£0.1920
    • 500:£0.1700
    IRLHS6376TRPBF
    DISTI # C1S322000502260
    Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
    RoHS: Compliant
    8516
    • 250:$0.2580
    • 100:$0.2587
    • 25:$0.3709
    • 10:$0.3729
    IRLHS6376TRPBF
    DISTI # C1S322000502251
    Infineon Technologies AGTrans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
    RoHS: Compliant
    3900
    • 1000:$0.1860
    • 500:$0.2020
    • 100:$0.2390
    • 50:$0.2730
    • 10:$0.3930
    IRLHS6376TRPBF
    DISTI # 2579953
    Infineon Technologies AGMOSFET, DUAL N-CH, 30V, 3.6A, PQFN-8
    RoHS: Compliant
    0
    • 1:$0.9500
    • 10:$0.7810
    • 100:$0.4770
    • 1000:$0.3680
    • 4000:$0.3130
    • 8000:$0.2930
    • 24000:$0.2780
    • 48000:$0.2710
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    Availability
    Stock:
    Available
    On Order:
    1990
    Enter Quantity:
    Current price of IRLHS6376TRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.59
    $0.59
    10
    $0.49
    $4.93
    100
    $0.30
    $30.10
    1000
    $0.23
    $232.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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