IRLHS6376TRP

IRLHS6376TRPBF vs IRLHS6376TRPBF-CUT TAPE vs IRLHS6376TRPBF.

 
PartNumberIRLHS6376TRPBFIRLHS6376TRPBF-CUT TAPEIRLHS6376TRPBF.
DescriptionMOSFET 30V 1 N-CH HEXFET 2.8nCTransistor Polarity:Dual N Channel, Continuous Drain Current Id:3.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.048ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:800mV, Po
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePQFN-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current3.6 A--
Rds On Drain Source Resistance63 mOhms--
Vgs Gate Source Voltage12 V--
Qg Gate Charge2.8 nC--
Pd Power Dissipation1.5 W--
ConfigurationDual--
PackagingReel--
Height0.9 mm--
Length2 mm--
Transistor Type2 N-Channel--
Width2 mm--
BrandInfineon / IR--
Product TypeMOSFET--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Part # AliasesSP001573000--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRLHS6376TRPBF MOSFET 30V 1 N-CH HEXFET 2.8nC
Infineon Technologies
Infineon Technologies
IRLHS6376TRPBF MOSFET 2N-CH 30V 3.6A PQFN
IRLHS6376TRPBF-CUT TAPE New and Original
IRLHS6376TRPBF. Transistor Polarity:Dual N Channel, Continuous Drain Current Id:3.6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.048ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:800mV, Po
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