| PartNumber | IRLR8103VPBF | IRLR8103VTRLPBF | IRLR8103VTRL |
| Description | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | MOSFET N-CH 30V 91A DPAK |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 89 A | 89 A | - |
| Rds On Drain Source Resistance | 10.5 mOhms | 10.5 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 27 nC | 27 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 89 W | 89 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | HEXFET Power MOSFET | HEXFET Power MOSFET | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Fall Time | 18 ns | 18 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 24 ns | 24 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Part # Aliases | SP001567340 | SP001558542 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |