IRLR8103VPBF

IRLR8103VPBF
Mfr. #:
IRLR8103VPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRLR8103VPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLR8103VPBF DatasheetIRLR8103VPBF Datasheet (P4-P6)IRLR8103VPBF Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
89 A
Rds On - Drain-Source Resistance:
10.5 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
27 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
89 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
2.3 mm
Length:
6.5 mm
Transistor Type:
1 N-Channel
Type:
HEXFET Power MOSFET
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
18 ns
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
24 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
SP001567340
Unit Weight:
0.139332 oz
Tags
IRLR8103V, IRLR810, IRLR81, IRLR8, IRLR, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
IRLR8103VPBF
DISTI # 26393138
Infineon Technologies AGTrans MOSFET N-CH 30V 91A 3-Pin(2+Tab) DPAK Tube
RoHS: Compliant
5400
  • 2500:$0.6038
  • 1000:$0.6816
  • 500:$0.8630
  • 100:$0.9792
  • 75:$1.2768
IRLR8103VPBF
DISTI # IRLR8103VPBF-ND
Infineon Technologies AGMOSFET N-CH 30V 91A DPAK
RoHS: Compliant
Min Qty: 6000
Container: Tube
Limited Supply - Call
    IRLR8103VTRPBF
    DISTI # IRLR8103VPBFTR-ND
    Infineon Technologies AGMOSFET N-CH 30V 91A DPAK
    RoHS: Compliant
    Min Qty: 6000
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 6000:$0.5230
    IRLR8103VPBF
    DISTI # 70018564
    Infineon Technologies AGMOSFET,30V,89A,9 MOHM,27 NC QG,LOGIC LEVEL,D-PAK
    RoHS: Compliant
    0
    • 6000:$1.6000
    • 12000:$1.5680
    • 30000:$1.5200
    • 60000:$1.4560
    • 150000:$1.3600
    IRLR8103VPBFInternational RectifierPower Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Compliant
    8800
    • 1000:$0.6500
    • 500:$0.6800
    • 100:$0.7100
    • 25:$0.7400
    • 1:$0.7900
    IRLR8103VPBF
    DISTI # 942-IRLR8103VPBF
    Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 9mOhms 27nC
    RoHS: Compliant
    2137
    • 1:$1.5600
    • 10:$1.3300
    • 100:$1.0200
    • 500:$0.8990
    • 1000:$0.7100
    IRLR8103VPBFInternational Rectifier 
    RoHS: Compliant
    Europe - 150
      IRLR8103VPBF
      DISTI # 8651299
      Infineon Technologies AGMOSFET, N, 30V, 89A, D-PAK
      RoHS: Compliant
      2154
      • 5:£0.4160
      • 25:£0.3780
      • 100:£0.3300
      • 250:£0.3290
      • 500:£0.3280
      IRLR8103VPBF
      DISTI # 8651299
      Infineon Technologies AGMOSFET, N, 30V, 89A, D-PAK
      RoHS: Compliant
      2154
      • 1:$2.4700
      • 10:$2.1000
      • 100:$1.6200
      • 500:$1.4200
      • 1000:$1.1300
      • 2500:$0.9960
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      Availability
      Stock:
      Available
      On Order:
      1985
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