IRLR8103VPBF Datasheet IRLR8103VTRPBF, IRLR8103VPBF, IRLR8103VTRLPBF | P4-P6

www.irf.com4

IRLR8103VPbF

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

1 10 100

0

1000

2000

3000

4000

5000

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

DS

V

C

=

0V,

C

f = 1MHz

+ C

C SHORTED

GS

iss gs gd , ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0 5 10 15 20 25 30

0

1

2

3

4

5

6

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

G

GS

I =

D

15A

V = 15V

DS

V = 24V

DS

1

10

100

1000

10000

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T

= 150 C

= 25 C

°

J

C

V , Drain-to-Source Voltage (V)

I , Drain Current (A)I , Drain Current (A)

DS

D

10us

100us

1ms

10ms

0.1

1

10

100

1000

0.0 0.4 0.8 1.2 1.6 2.0 2.4

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

V = 0 V

GS

T = 25 C

J

°

T = 150 C

J

°

www.irf.com 5

IRLR8103VPbF

R

D

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

V

GS

R

G

D.U.T.

10V

+

-

25 50 75 100 125 150

0

20

40

60

80

100

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

V

GS

R

G

D.U.T.

10V

V

DD

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

J DM thJC C

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response(Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

www.irf.com6

IRLR8103VPbF

Fig 13. On-Resistance Vs. Gate Voltage

Fig 12. On-Resistance Vs. Drain Current

Fig 14a&b. Basic Gate Charge Test Circuit and Waveform

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

V

GS

Q

G

Q

GS

Q

GD

V

G

Charge

0 50 100 150 200 250 300 350

I

D

, Drain Current ( A )

0.006

0.008

0.010

0.012

0.014

0.016

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

Ω

)

VGS = 4.5V

VGS = 10V

0.0 2.0 4.0 6.0 8.0

V

GS,

Gate -to -Source Voltage (V)

0.006

0.008

0.010

0.012

0.014

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

Ω

)

I

D

= 15A

IRLR8103VPBF

IRLR8103VPBF

Products related to this Datasheet