DEVICE CHARACTERISTICS
12/0604
D-Pak
IRLR8103VPbF
www.irf.com 1
S
D
G
PD - 95093A
IRLR8103V
R
DS
on
7.9 mΩ
Q
G
27 nC
Q
SW
12 nC
Q
OSS
29nC
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
Continuous Drain or Source Current
TC = 25°C
(V
GS
> 10V)
TC= 90°C
I
DM
TC = 25°C
TC = 90°C
T
J
, T
STG
°C
I
S
I
SM
Thermal Resistance
Symbol Typ. Max. Units
R
θJA
––– 50
R
θJC
––– 1.09
°C/W
A
V
A
I
D
P
D
W
IRLR8103V
91
363
30
±20
63
91
363
115
-55 to 150
60
Power Dissipation
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Parameter
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
•
100% R
G
Tested
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make it ideal for high efficiency DC-
DC converters that power the latest generation of
microprocessors.
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
R
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
The IRLR8103V offers an extremely low combination of
Q
sw
& R
DS(on)
for reduced losses in both control and
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
