IS61WV51216EE stock, IS61WV51216EE, IS61WV51216EEBLL-10TLI-TR


PartNumber	IS61WV51216EEALL-20BLI	IS61WV51216EEALL-20BLI-TR	IS61WV51216EEALL-20TLI
Description	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS
Manufacturer	ISSI	ISSI	ISSI
Product Category	SRAM	SRAM	SRAM
RoHS	Y	Y	Y
Memory Size	8 Mbit	8 Mbit	8 Mbit
Organization	512 k x 16	512 k x 16	512 k x 16
Access Time	20 ns	20 ns	20 ns
Interface Type	Parallel	Parallel	Parallel
Supply Voltage Max	2.2 V	2.2 V	2.2 V
Supply Voltage Min	1.65 V	1.65 V	1.65 V
Supply Current Max	90 mA	90 mA	90 mA
Minimum Operating Temperature	- 40 C	- 40 C	- 40 C
Maximum Operating Temperature	+ 85 C	+ 85 C	+ 85 C
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	BGA-48	BGA-48	TSOP-44
Series	IS61WV51216EEALL	IS61WV51216EEALL	IS61WV51216EEALL
Type	Asynchronous	Asynchronous	Asynchronous
Brand	ISSI	ISSI	ISSI
Moisture Sensitive	Yes	Yes	Yes
Product Type	SRAM	SRAM	SRAM
Factory Pack Quantity	480	2500	135
Subcategory	Memory & Data Storage	Memory & Data Storage	Memory & Data Storage
Packaging	-	Reel	-

Start with
IS61WV51216EE 12
IS61WV51216E 26
IS61WV51216 34
IS61WV512 60
IS61WV 282
IS61 1597
IS6 2767

Search Part Number : "IS61WV51216EE", Match & Start with "IS61WV51216EE" - Total : 14

Manufacturer	Part #	Description
ISSI	IS61WV51216EEBLL-10TLI-TR	SRAM 8M 8,10ns 2.4-3.6V 512Kx16 LP Asyn SRAM
	IS61WV51216EEBLL-10BLI	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
	IS61WV51216EEBLL-10T2LI	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS
	IS61WV51216EEBLL-10B2LI	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS
	IS61WV51216EEALL-20BLI	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS
	IS61WV51216EEBLL-10TLI	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,44 Pin TSOP II, RoHS
	IS61WV51216EEBLL-10BLI-TR	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
	IS61WV51216EEALL-20BLI-TR	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 48 Ball mBGA (6x8 mm), RoHS
	IS61WV51216EEALL-20TLI	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS
	IS61WV51216EEALL-20TLI-TR	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16, 20ns,1.65V-2.2V, 44 Pin TSOP II, RoHS
	IS61WV51216EEBLL-10T2LI-TR	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Pin TSOP I, ERR1/2 pins, RoHS
	IS61WV51216EEBLL-10B2LI-TR	SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), ERR1/2 pins, RoHS
	IS61WV51216EEBLL-10BLI	IC SRAM 8M PARALLEL 48TFBGA
	IS61WV51216EEBLL-10TLI	IC SRAM 8M PARALLEL 44TSOP II

IS61WV51216EE

IS61WV51216EEALL-20BLI vs IS61WV51216EEALL-20BLI-TR vs IS61WV51216EEALL-20TLI