PartNumber | IXBT12N300HV | IXBT10N170 | IXBR42N170 |
Description | IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT | IGBT Transistors 10 Amps 1700V 2.3 Rds | IGBT Transistors 57Amps 1700V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-268-2 | TO-268-3 | ISOPLUS 247-3 |
Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 3 kV | 1.7 kV | - |
Collector Emitter Saturation Voltage | 2.8 V | 3.4 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 30 A | 20 A | - |
Pd Power Dissipation | 160 W | 140 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | Very High Voltage | IXBT10N170 | IXBR42N170 |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 30 A | 40 A | - |
Brand | IXYS | IXYS | IXYS |
Gate Emitter Leakage Current | +/- 100 nA | 100 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | BIMOSFET | BIMOSFET | BIMOSFET |
Unit Weight | 0.141096 oz | 0.158733 oz | 0.186952 oz |
Height | - | 5.1 mm | - |
Length | - | 16.05 mm | - |
Operating Temperature Range | - | - 55 C to + 150 C | - |
Width | - | 14 mm | - |
Continuous Collector Current | - | 20 A | - |