IXBH20

IXBH20N300 vs IXBH20N140 vs IXBH20N160

 
PartNumberIXBH20N300IXBH20N140IXBH20N160
DescriptionIGBT Transistors DISC IGBT BIMSFT-VERYHIVOLTTRANSISTOR
ManufacturerIXYS--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max3 kV--
Collector Emitter Saturation Voltage2.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C50 A--
Pd Power Dissipation250 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesVery High Voltage--
PackagingTube--
Continuous Collector Current Ic Max50 A--
Height21.46 mm--
Length16.26 mm--
Width5.3 mm--
BrandIXYS--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
TradenameBIMOSFET--
Unit Weight0.056438 oz--
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXBH20N300 IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
IXBH20N140 New and Original
IXBH20N160 TRANSISTOR
IXBH20N300 IGBT 3000V 50A 250W TO247
IXBH20N360H New and Original
IXBH20N360HV IGBT 3600V 70A TO-247HV
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