PartNumber | IXDR30N120D1 | IXDR35N60BD1 | IXDR35N60CD1 |
Description | IGBT Transistors 30 Amps 1200V | IGBT Transistors 35 Amps 600V | |
Manufacturer | IXYS | IXYS | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | ISOPLUS247-3 | ISOPLUS-247-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | - |
Collector Emitter Saturation Voltage | 2.4 V | 2.2 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Continuous Collector Current at 25 C | 50 A | 38 A | - |
Pd Power Dissipation | 200 W | 125 W | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | IXDR30N120 | IXDR35N60B | - |
Packaging | Tube | Tube | - |
Continuous Collector Current Ic Max | 60 A | 48 A | - |
Height | 21.34 mm | 21.34 mm | - |
Length | 16.13 mm | 16.13 mm | - |
Operating Temperature Range | - 55 C to + 150 C | - 55 C to + 150 C | - |
Width | 5.21 mm | 5.21 mm | - |
Brand | IXYS | IXYS | - |
Continuous Collector Current | 50 A | 38 A | - |
Gate Emitter Leakage Current | 500 nA | 500 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | IGBTs | IGBTs | - |
Tradename | ISOPLUS | - | - |
Unit Weight | 0.186952 oz | 0.186952 oz | - |