PartNumber | IXFH10N100 | IXFH10N100P | IXFH10N100Q |
Description | MOSFET 1KV 10A | Darlington Transistors MOSFET 10 Amps 1000V | MOSFET 12 Amps 1000V 1.05 Rds |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1 kV | - | - |
Id Continuous Drain Current | 10 A | - | - |
Rds On Drain Source Resistance | 1.2 Ohms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 300 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HyperFET | Polar HiPerFET | - |
Packaging | Tube | Tube | - |
Height | 21.46 mm | - | - |
Length | 16.26 mm | - | - |
Series | IXFH10N100 | IXFH10N100P | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.3 mm | - | - |
Brand | IXYS | - | - |
Forward Transconductance Min | 10 S | - | - |
Fall Time | 32 ns | 75 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 33 ns | 45 ns | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 62 ns | 47 ns | - |
Typical Turn On Delay Time | 21 ns | 38 ns | - |
Unit Weight | 0.229281 oz | 0.229281 oz | - |
Package Case | - | TO-247-3 | - |
Pd Power Dissipation | - | 380 W | - |
Vgs Gate Source Voltage | - | 30 V | - |
Id Continuous Drain Current | - | 10 A | - |
Vds Drain Source Breakdown Voltage | - | 1000 V | - |
Vgs th Gate Source Threshold Voltage | - | 6.5 V | - |
Rds On Drain Source Resistance | - | 1.4 Ohms | - |
Qg Gate Charge | - | 56 nC | - |
Forward Transconductance Min | - | 4.2 S | - |