PartNumber | IXFH15N100Q3 | IXFH15N100P | IXFH15N60 |
Description | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A | MOSFET 15 Amps 1000V 0.76 Rds | MOSFET 15 Amps 600V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | 600 V |
Id Continuous Drain Current | 15 A | 15 A | 15 A |
Rds On Drain Source Resistance | 1.05 Ohms | 760 mOhms | 500 mOhms |
Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
Qg Gate Charge | 64 nC | 97 nC | - |
Pd Power Dissipation | 690 W | 543 W | 300 W |
Configuration | Single | Single | Single |
Tradename | HiPerFET | HiPerFET | HyperFET |
Packaging | Tube | Tube | Tube |
Series | IXFH15N100 | IXFH15N100P | IXFH15N60 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | IXYS |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 250 ns | 44 ns | 43 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.056438 oz | 0.229281 oz | 0.229281 oz |
Vgs th Gate Source Threshold Voltage | - | 6.5 V | - |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 21.46 mm | 21.46 mm |
Length | - | 16.26 mm | 16.26 mm |
Type | - | Polar Power MOSFET HiPerFET | - |
Width | - | 5.3 mm | 5.3 mm |
Forward Transconductance Min | - | 6.5 S | - |
Fall Time | - | 58 ns | 40 ns |
Typical Turn Off Delay Time | - | 44 ns | 70 ns |
Typical Turn On Delay Time | - | 41 ns | 20 ns |