IXFH52

IXFH52N30Q vs IXFH52N30P vs IXFH52N30P3

 
PartNumberIXFH52N30QIXFH52N30PIXFH52N30P3
DescriptionMOSFET 300V 52AMOSFET 52 Amps 300V 0.066 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage300 V300 V-
Id Continuous Drain Current52 A52 A-
Rds On Drain Source Resistance60 mOhms73 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation360 W400 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
SeriesIXFH52N30IXFH52N30-
Transistor Type1 N-Channel1 N-Channel-
Width5.3 mm5.3 mm-
BrandIXYSIXYS-
Forward Transconductance Min35 S20 S-
Fall Time25 ns20 ns-
Product TypeMOSFETMOSFET-
Rise Time60 ns22 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time80 ns60 ns-
Typical Turn On Delay Time27 ns24 ns-
Unit Weight0.229281 oz0.229281 oz-
Vgs th Gate Source Threshold Voltage-5 V-
Qg Gate Charge-110 nC-
Type-Polar Power MOSFETs HiPerFET-
Manufacturer Part # Description RFQ
Littelfuse
Littelfuse
IXFH52N50P2 MOSFET PolarP2 Power MOSFET
IXFH52N30Q MOSFET 300V 52A
IXFH52N30P MOSFET 52 Amps 300V 0.066 Rds
IXFH52N30P3 New and Original
IXFH52N50P2 Darlington Transistors MOSFET PolarP2 Power MOSFET
IXFH52N30Q MOSFET 300V 52A
IXFH52N30P IGBT Transistors MOSFET 52 Amps 300V 0.066 Rds
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