PartNumber | IXFK32N100X | IXFK32N100P | IXFK320N17T2 |
Description | MOSFET 1000V 32A TO-264 Power MOSFET | MOSFET 32 Amps 1000V 0.32 Rds | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-264-3 | TO-264-3 | TO-264 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1000 V | 1 kV | - |
Id Continuous Drain Current | 32 A | 32 A | - |
Rds On Drain Source Resistance | 220 mOhms | 320 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3.5 V | 6.5 V | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Qg Gate Charge | 130 nC | 225 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
Pd Power Dissipation | 890 W | 960 W | 1670 W |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | Tube | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 14 S | 13 S | - |
Fall Time | 12 ns | 43 ns | 230 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 12 ns | 55 ns | 170 ns |
Factory Pack Quantity | 25 | 25 | 25 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 80 ns | 76 ns | - |
Typical Turn On Delay Time | 29 ns | 50 ns | - |
Height | - | 26.16 mm | - |
Length | - | 19.96 mm | - |
Series | - | IXFK32N100 | IXFK320N17 |
Type | - | Polar Power MOSFET HiPerFET | - |
Width | - | 5.13 mm | - |
Unit Weight | - | 0.352740 oz | 0.352740 oz |
Product | - | - | MOSFET Gate Drivers |