PartNumber | IXFN210N30P3 | IXFN210N20P | IXFN210N30X3 |
Description | MOSFET N-Channel: Power MOSFET w/Fast Diode | MOSFET 188 Amps 200V 0.0105 Rds | MOSFET DISCMSFT NCHULTRJNCTX3CLAS (MI |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | - |
Mounting Style | Chassis Mount | Chassis Mount | - |
Package / Case | SOT-227-4 | SOT-227-4 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 300 V | 200 V | - |
Id Continuous Drain Current | 192 A | 188 A | - |
Rds On Drain Source Resistance | 14.5 mOhms | 10.5 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 268 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 175 C | - |
Pd Power Dissipation | 1.5 kW | 1.07 kW | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | Tube | Tube |
Series | IXFN210N30 | IXFN210N20 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | IXYS | IXYS | IXYS |
Fall Time | 13 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 25 ns | - | - |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 94 ns | - | - |
Typical Turn On Delay Time | 46 ns | - | - |
Unit Weight | 1.058219 oz | 1.058219 oz | - |