PartNumber | IXFN230N20T | IXFN230N10 | IXFN23N100 |
Description | MOSFET 230A 200V | MOSFET 230 Amps 100V 0.006 Rds | MOSFET 23 Amps 1000V 0.43 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 100 V | 1 kV |
Id Continuous Drain Current | 220 A | 230 A | 24 A |
Rds On Drain Source Resistance | 7.5 mOhms | 6.5 mOhms | 390 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
Qg Gate Charge | 358 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 1090 W | 700 W | 568 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | HyperFET | HyperFET |
Packaging | Tube | Tube | Tube |
Height | 12.22 mm | 9.6 mm | 9.6 mm |
Length | 38.23 mm | 38.23 mm | 38.2 mm |
Series | IXFN230N20 | IXFN230N10 | IXFN23N100 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | GigaMOS Power MOSFET | - | - |
Width | 25.42 mm | 25.42 mm | 25.07 mm |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 90 S | - | - |
Fall Time | 17 ns | 60 ns | 21 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 38 ns | 150 ns | 35 ns |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 62 ns | 112 ns | 75 ns |
Typical Turn On Delay Time | 58 ns | 40 ns | 35 ns |
Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |