PartNumber | IXFN520N075T2 | IXFN50N120SIC | IXFN50N50 |
Description | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET SICARBIDE-DISCRETE MOSFET (MIN | MOSFET 50 Amps 500V 0.1 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | - | Si |
Mounting Style | Chassis Mount | - | Chassis Mount |
Package / Case | SOT-227-4 | - | SOT-227-4 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 75 V | - | 500 V |
Id Continuous Drain Current | 480 A | - | 50 A |
Rds On Drain Source Resistance | 1.9 mOhms | - | 100 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Vgs Gate Source Voltage | 10 V | - | 20 V |
Qg Gate Charge | 545 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 150 C |
Pd Power Dissipation | 940 W | - | 600 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | HiPerFET | 0 | HyperFET |
Packaging | Tube | Tube | Tube |
Series | IXFN520N075 | - | IXFN50N50 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Type | TrenchT2 GigaMOS HiperFet | - | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 65 S | - | - |
Fall Time | 35 ns | - | 45 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 36 ns | - | 60 ns |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 80 ns | - | 120 ns |
Typical Turn On Delay Time | 48 ns | - | 45 ns |
Unit Weight | 1.058219 oz | - | 1.058219 oz |
Height | - | - | 9.6 mm |
Length | - | - | 38.23 mm |
Width | - | - | 25.42 mm |