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IXFN520N075T2

IXFN520N075T2
Mfr. #:
IXFN520N075T2
Manufacturer:
Littelfuse
Description:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IXFN520N075T2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN520N075T2 DatasheetIXFN520N075T2 Datasheet (P4-P6)
ECAD Model:
More Information:
IXFN520N075T2 more Information
Product Attribute
Attribute Value
Manufacturer:
IXYS
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Chassis Mount
Package / Case:
SOT-227-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
75 V
Id - Continuous Drain Current:
480 A
Rds On - Drain-Source Resistance:
1.9 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
545 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
940 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
HiPerFET
Packaging:
Tube
Series:
IXFN520N075
Transistor Type:
1 N-Channel
Type:
TrenchT2 GigaMOS HiperFet
Brand:
IXYS
Forward Transconductance - Min:
65 S
Fall Time:
35 ns
Product Type:
MOSFET
Rise Time:
36 ns
Factory Pack Quantity:
10
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
80 ns
Typical Turn-On Delay Time:
48 ns
Unit Weight:
1.058219 oz
Tags
IXFN52, IXFN5, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 75 V 940 W 545 nC TranchT2 HiperFET Power MosFet SMT - SOT-227
***p One Stop Global
Trans MOSFET N-CH 75V 480A 4-Pin SOT-227B
***i-Key
MOSFET N-CH 75V 480A SOT227
***ukat
N-Ch 75V 480A 940W 0,0019R SOT227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Part # Mfg. Description Stock Price
IXFN520N075T2
DISTI # V36:1790_15877726		IXYS CorporationTrans MOSFET N-CH 75V 480A 4-Pin SOT-227B
RoHS: Compliant		0
    IXFN520N075T2
    DISTI # IXFN520N075T2-ND    		IXYS CorporationMOSFET N-CH 75V 480A SOT227
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		254In Stock
    • 500:$16.6980
    • 100:$19.1180
    • 30:$20.5700
    • 10:$22.3850
    • 1:$24.2000
    IXFN520N075T2
    DISTI # 747-IXFN520N075T2    		IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
    RoHS: Compliant    		389
    • 1:$24.2000
    • 5:$22.9900
    • 10:$22.3800
    • 25:$20.5700
    • 50:$19.7000
    • 100:$19.1100
    • 200:$17.5400
    IXFN520N075T2
    DISTI # IXFN520N075T2    		IXYS CorporationN-Ch 75V 480A 940W 0,0019R SOT227B
    RoHS: Compliant    		0
    • 1:€19.6500
    • 5:€16.6500
    • 10:€15.6500
    • 25:€15.0500
    IXFN520N075T2
    DISTI # XSFP00000002804    		IXYS Corporation 
    RoHS: Compliant    		20 in Stock0 on Order
    • 20:$25.4400
    • 10:$27.2600
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    Availability
    Stock:
    411
    On Order:
    2394
    Enter Quantity:
    Current price of IXFN520N075T2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $24.20
    $24.20
    5
    $22.99
    $114.95
    10
    $22.38
    $223.80
    25
    $20.57
    $514.25
    50
    $19.70
    $985.00
    100
    $19.11
    $1 911.00
    200
    $17.54
    $3 508.00
    500
    $16.69
    $8 345.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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