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IXFN520N075T2

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN520N075T2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 150
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
200
0 20 40 60 80 100 120 140 160 180 200 220
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
150
o
C
25
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 100 200 300 400 500 600
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 37.5V
I
D
= 260A
I
G
= 10mA
Fig. 11. Capacitance
0.1
1
10
100
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - NanoFarad
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
10,000
0.1 1 10 100
V
DS
- Volts
I
D
- Amperes
25μs
100μs
1ms
10ms
R
DS(on)
Limit
T
J
= 175
o
C
T
C
= 25
o
C
Single Pulse
100ms
External Lead Limit
DC
© 2018 IXYS CORPORATION, All Rights Reserved
IXFN520N075T2
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
0
20
40
60
80
100
120
140
160
180
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1Ω , V
GS
= 10V
V
DS
= 37.5V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
100
200
300
400
500
600
12345678910
R
G
- Ohms
t
r
- Nanoseconds
0
40
80
120
160
200
240
t
d(on)
- Nanoseconds
I
D
= 100A
I
D
= 200A
t
r
t
d(off)
T
J
= 125
o
C, V
GS
= 10V
V
DS
= 37.5V
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
30
32
34
36
38
40
42
44
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
70
80
90
100
110
120
130
140
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 1Ω, V
GS
= 10V
V
DS
= 37.5V
I
D
= 200A
I
D
= 100A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
32
34
36
38
40
42
44
46
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
40
60
80
100
120
140
160
180
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 1Ω, V
GS
= 10V
V
DS
= 37.5V
T
J
= 25
o
C
T
J
= 125
o
C
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
0
20
40
60
80
100
120
140
160
180
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1Ω , V
GS
= 10V
V
DS
= 37.5V
I
D
= 200A
I
D
= 100A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
100
200
300
400
500
600
12345678910
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 125
o
C, V
GS
= 10V
V
DS
= 37.5V
I
D
= 200A, 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN520N075T2
IXYS REF: F_520N075T2 (V9)11-09-09
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 19. Maximum Transient Thermal Impedance
.sadgsfgsf
0.300
P1-P3P4-P6

IXFN520N075T2

Mfr. #:
Buy IXFN520N075T2
Manufacturer:
Littelfuse
Description:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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