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IXFN520N075T2

P1-P3P4-P6
© 2018 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 175C 75V
V
DGR
T
J
= 25C to 175C, R
GS
= 1M 75 V
V
GSS
Continuous 20 V
V
GSM
Transient 30 V
I
D25
T
C
= 25C (Chip Capability) 480 A
I
L(RMS)
External Lead Current Limit 200 A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
1500 A
I
A
T
C
= 25C 200 A
E
AS
T
C
= 25C3J
P
D
T
C
= 25C 940 W
T
J
-55 ... +175 C
T
JM
175 C
T
stg
-55 ... +175 C
V
ISOL
50/60 Hz, RMS t = 1 minute 2500 V~
I
ISOL
1mA t = 1 second 3000 V~
M
d
Mounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 3mA 75 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 2.5 5.0 V
I
GSS
V
GS
= 20V, V
DS
= 0V 200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 25 A
T
J
= 150C 2 mA
R
DS(on)
V
GS
= 10V, I
D
= 100A, Note 1 1.5 1.9 m
TrenchT2
TM
GigaMOS
TM
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN520N075T2
DS100193B(4/18)
V
DSS
= 75V
I
D25
= 480A
R
DS(on)
1.9m
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
175°C Operating Temperature
Isolation Voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R
DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
miniBLOC, SOT-227
E153432
G
D
S
S
G = Gate D = Drain
S = Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN520N075T2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
SOT-227B (IXFN) Outline
(M4 screws (4x) supplied)
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 65 105 S
C
iss
41 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 4150 pF
C
rss
530 pF
R
Gi
Gate Input Resistance 1.36 
t
d(on)
48 ns
t
r
36 ns
t
d(off)
80 ns
t
f
35 ns
Q
g(on)
545 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 260A 177 nC
Q
gd
135 nC
R
thJC
0.16 C/W
R
thCS
0.05 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 520 A
I
SM
Repetitive, Pulse Width Limited by T
JM
1600 A
V
SD
I
F
= 100A, V
GS
= 0V, Note 1 1.25 V
t
rr
150 ns
I
RM
7 A
Q
RM
357 nC
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 200A
R
G
= 1 (External)
I
F
= 150A, V
GS
= 0V
-di/dt = 100A/s
V
R
= 37.5V
© 2018 IXYS CORPORATION, All Rights Reserved
IXFN520N075T2
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
350
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
5V
7V
8V
6V
Fig. 3. Output Characteristics @ T
J
= 150
o
C
0
50
100
150
200
250
300
350
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
9V
7V
8V
5V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 150A Value vs.
Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 300A
I
D
= 150A
Fig. 5. R
DS(on)
Normalized to I
D
= 150A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0 50 100 150 200 250 300 350
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
T
J
= 175
o
C
T
J
= 25
o
C
Fig. 6. Drain Current vs. Case Temperature
0
40
80
120
160
200
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
350
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
7V
5V
6V
10V
9V
8V
P1-P3P4-P6

IXFN520N075T2

Mfr. #:
Buy IXFN520N075T2
Manufacturer:
Littelfuse
Description:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
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