PartNumber | IXFN52N100X | IXFN520N075T2 | IXFN52N90P |
Description | MOSFET 1000V 44A SOT-227 Power MOSFET | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Chassis Mount | Chassis Mount |
Package / Case | SOT-227-4 | SOT-227-4 | SOT-227-4 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1000 V | 75 V | 900 V |
Id Continuous Drain Current | 44 A | 480 A | 43 A |
Rds On Drain Source Resistance | 125 mOhms | 1.9 mOhms | 160 mOhms |
Vgs th Gate Source Threshold Voltage | 3.5 V | 2.5 V | - |
Vgs Gate Source Voltage | 30 V | 10 V | 30 V |
Qg Gate Charge | 245 nC | 545 nC | 132 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
Pd Power Dissipation | 830 W | 940 W | 890 W |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | HiPerFET | HiPerFET | HiPerFET |
Packaging | Tube | Tube | Tube |
Series | X-Class | IXFN520N075 | IXFN52N90 |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 23 S | 65 S | 35 S / 20 S |
Fall Time | 9 ns | 35 ns | 42 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 13 ns | 36 ns | 80 ns |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 107 ns | 80 ns | 95 ns |
Typical Turn On Delay Time | 34 ns | 48 ns | 63 ns |
Type | - | TrenchT2 GigaMOS HiperFet | Polar Power MOSFET |
Unit Weight | - | 1.058219 oz | 1.340411 oz |