 | |  | |
| PartNumber | IXFN64N50PD2 | IXFN64N50P | IXFN64N50PD3 |
| Description | Discrete Semiconductor Modules 64 Amps 500V | MOSFET 500V 64A | MOSFET N-CH 500V 52A SOT-227B |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | MOSFET | - |
| RoHS | Y | Y | - |
| Product | Power Semiconductor Modules | - | - |
| Type | Boost and Buck MOSFET Modules | - | - |
| Mounting Style | SMD/SMT | Chassis Mount | - |
| Package / Case | SOT-227B | SOT-227-4 | - |
| Series | IXFN64N50 | IXFN64N50 | - |
| Packaging | Tube | Tube | - |
| Brand | IXYS | IXYS | - |
| Product Type | Discrete Semiconductor Modules | MOSFET | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | - |
| Unit Weight | 1.058219 oz | 1.058219 oz | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 500 V | - |
| Id Continuous Drain Current | - | 61 A | - |
| Rds On Drain Source Resistance | - | 85 mOhms | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 700 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | HiPerFET | - |
| Height | - | 9.6 mm | - |
| Length | - | 38.23 mm | - |
| Transistor Type | - | 1 N-Channel | - |
| Width | - | 25.42 mm | - |
| Forward Transconductance Min | - | 50 S | - |
| Fall Time | - | 22 ns | - |
| Rise Time | - | 25 ns | - |
| Typical Turn Off Delay Time | - | 85 ns | - |
| Typical Turn On Delay Time | - | 30 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Littelfuse |
IXFN64N50PD2 | Discrete Semiconductor Modules 64 Amps 500V | |
| IXFN64N50P | MOSFET 500V 64A | ||
| IXFN64N50P | MOSFET N-CH 500V 61A SOT-227 | ||
| IXFN64N50PD3 | MOSFET N-CH 500V 52A SOT-227B | ||
| IXFN64N50PD2 | Discrete Semiconductor Modules 64 Amps 500V |