PartNumber | IXTH24N65X2 | IXTH260N055T2 | IXTH24P20 |
Description | Discrete Semiconductor Modules DiscMSFT NChUltraJnctn X2Class TO-247AD | MOSFET TRENCHT2 PWR MOSFET 55V 260A | MOSFET -24 Amps -200V 0.15 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | - | - |
Type | X2-Class | - | Standard Power MOSFET |
Vgs Gate Source Voltage | 30 V | - | 20 V |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Packaging | Tube | Tube | Tube |
Configuration | Single | - | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | P-Channel |
Fall Time | 19 ns | - | 28 ns |
Id Continuous Drain Current | 24 A | 260 A | 24 A |
Pd Power Dissipation | 390 W | - | 300 W |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rds On Drain Source Resistance | 145 mOhms | 3.3 mOhms | 150 mOhms |
Rise Time | 25 ns | - | 29 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | HiPerFET | HiPerFET | - |
Typical Turn Off Delay Time | 50 ns | - | 68 ns |
Typical Turn On Delay Time | 20 ns | - | 36 ns |
Vds Drain Source Breakdown Voltage | 650 V | 55 V | 200 V |
Vgs th Gate Source Threshold Voltage | 3 V | - | 5 V |
Technology | - | Si | Si |
Series | - | IXTH260N055 | IXTH24P20 |
Unit Weight | - | 0.229281 oz | 0.229281 oz |
Number of Channels | - | - | 1 Channel |
Qg Gate Charge | - | - | 150 nC |
Channel Mode | - | - | Enhancement |
Height | - | - | 21.46 mm |
Length | - | - | 16.26 mm |
Transistor Type | - | - | 1 P-Channel |
Width | - | - | 5.3 mm |
Forward Transconductance Min | - | - | 10 S |