PartNumber | IXTN600N04T2 | IXTN62N50L | IXTN60N50L2 |
Description | Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET | MOSFET 62 Amps 500V | MOSFET 60 Amps 500V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Type | TrenchT2 GigaMOS | Linear Power MOSFET | Linear Power MOSFET |
Mounting Style | SMD/SMT | Chassis Mount | Chassis Mount |
Package / Case | SOT-227B | SOT-227-4 | SOT-227-4 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Series | IXTN600N04 | IXTN62N50 | IXTN60N50 |
Packaging | Tube | Tube | Tube |
Output Current | 600 A | - | - |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 250 ns | 75 ns | 38 ns |
Pd Power Dissipation | 940 W | 800 W | 735 W |
Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
Rise Time | 20 ns | 85 ns | 40 ns |
Factory Pack Quantity | 10 | 10 | 10 |
Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
Tradename | HiPerFET | Linear | Linear L2 |
Unit Weight | 1.058219 oz | 1.058219 oz | 1.058219 oz |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Vds Drain Source Breakdown Voltage | - | 500 V | 500 V |
Id Continuous Drain Current | - | 62 A | 53 A |
Rds On Drain Source Resistance | - | 100 mOhms | 100 mOhms |
Vgs th Gate Source Threshold Voltage | - | 3 V | 2.5 V |
Vgs Gate Source Voltage | - | 30 V | 30 V |
Qg Gate Charge | - | 550 nC | 610 nC |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Height | - | 12.22 mm | 12.22 mm |
Length | - | 38.23 mm | 38.23 mm |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Width | - | 25.42 mm | 25.42 mm |
Forward Transconductance Min | - | 10 S | 18 S |
Typical Turn Off Delay Time | - | 110 ns | 165 ns |
Typical Turn On Delay Time | - | 36 ns | 40 ns |