IXTN600N04T2

IXTN600N04T2
Mfr. #:
IXTN600N04T2
Manufacturer:
Littelfuse
Description:
Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
Lifecycle:
New from this manufacturer.
Datasheet:
IXTN600N04T2 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IXTN600N04T2 more Information
Product Attribute
Attribute Value
Manufacturer
IXYS
Product Category
Bridge Rectifiers
Series
IXTN600N04
Type
TrenchT2 GigaMOS
Packaging
Tube
Unit-Weight
1.340411 oz
Mounting-Style
SMD/SMT
Tradename
HiPerFET
Package-Case
SOT-227B
Pd-Power-Dissipation
940 W
Output-Current
600 A
Fall-Time
250 ns
Rise-Time
20 ns
Tags
IXTN6, IXTN, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 40 V 600 A 1.05 mO Chassis Mount GigaMOS TrenchT2 Mosfet - SOT-227B
***ical
Trans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Part # Mfg. Description Stock Price
IXTN600N04T2
DISTI # V99:2348_15878365
IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant
2
  • 500:$15.5400
  • 200:$16.3600
  • 100:$17.7500
  • 50:$18.3800
  • 25:$19.2500
  • 10:$20.8500
  • 5:$21.9300
  • 1:$22.7000
IXTN600N04T2
DISTI # IXTN600N04T2-ND
IXYS CorporationMOSFET N-CH 40V 600A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube
370In Stock
  • 100:$21.7771
  • 10:$25.4990
  • 1:$27.5700
IXTN600N04T2
DISTI # 27158570
IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant
26
  • 500:$16.5984
  • 200:$17.4432
  • 100:$19.0080
  • 50:$19.5744
  • 25:$20.4480
  • 10:$22.2528
  • 5:$23.3664
  • 1:$24.0576
IXTN600N04T2
DISTI # 27472446
IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant
2
  • 1:$22.7000
IXTN600N04T2
DISTI # 747-IXTN600N04T2
IXYS CorporationDiscrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant
449
  • 1:$25.0600
  • 5:$24.3400
  • 10:$23.1800
  • 25:$21.3000
  • 50:$20.3900
  • 100:$19.8000
  • 200:$18.1700
IXTN600N04T2
DISTI # C1S331700073039
IXYS CorporationTrans MOSFET N-CH 40V 600A Automotive 4-Pin SOT-227B
RoHS: Compliant
26
  • 25:$26.5000
  • 10:$28.7000
  • 5:$31.2000
  • 1:$38.0000
Image Part # Description
IXTN600N04T2

Mfr.#: IXTN600N04T2

OMO.#: OMO-IXTN600N04T2

Discrete Semiconductor Modules GigaMOS Trench T2 HiperFET PWR MOSFET
IXTN60N50L2

Mfr.#: IXTN60N50L2

OMO.#: OMO-IXTN60N50L2

MOSFET 60 Amps 500V
IXTN600N04T2

Mfr.#: IXTN600N04T2

OMO.#: OMO-IXTN600N04T2-IXYS-CORPORATION

Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXTN60N50L2

Mfr.#: IXTN60N50L2

OMO.#: OMO-IXTN60N50L2-IXYS-CORPORATION

MOSFET N-CH 500V 53A SOT-227
Availability
Stock:
Available
On Order:
2000
Enter Quantity:
Current price of IXTN600N04T2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$23.31
$23.31
10
$22.14
$221.44
100
$20.98
$2 097.90
500
$19.81
$9 906.75
1000
$18.65
$18 648.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
Top