PartNumber | IXTP1N100P | IXTP1N100 | IXTP1N100D |
Description | MOSFET 1 Amps 1000V 14 Rds | MOSFET 1.5 Amps 1000V 11 Rds | |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
Id Continuous Drain Current | 1.2 A | 1.5 A | - |
Rds On Drain Source Resistance | 13 Ohms | 11 Ohms | - |
Vgs Gate Source Voltage | 20 V | 30 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 50 W | 54 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | - |
Height | 9.15 mm | 9.15 mm | - |
Length | 10.66 mm | 10.66 mm | - |
Series | IXTP1N100 | IXTP1N100 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.83 mm | 4.82 mm | - |
Brand | IXYS | IXYS | - |
Fall Time | 24 ns | 18 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 26 ns | 19 ns | - |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 55 ns | 20 ns | - |
Typical Turn On Delay Time | 20 ns | 18 ns | - |
Unit Weight | 0.081130 oz | 0.012346 oz | - |